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18-mbit burst of 4 pipelined sram with q dr? architecture cy7c1307bv25 cy7c1305bv25 cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document #: 38-05630 rev. *a revised april 3, 2006 features ? separate independent read and write data ports ? supports concurrent transactions ? 167-mhz clock for high bandwidth ? 2.5 ns clock-to-valid access time ? 4-word burst for reducing the address bus frequency ? double data rate (ddr) in terfaces on both read and write ports (data transferred at 333 mhz) @167 mhz ? two input clocks (k and k ) for precise ddr timing ? sram uses rising edges only ? two input clocks for output data (c and c ) to minimize clock-skew an d flight-time mismatches. ? single multiplexed address input bus latches address inputs for both read and write ports ? separate port selects for depth expansion ? synchronous internally self-timed writes ? 2.5v core power supply with hstl inputs and outputs ? available in 165-ball fbga package (13 x 15 x 1.4 mm) ? variable drive hstl output buffers ? expanded hstl output voltage (1.4v?1.9v) ? jtag interface configurations ? cy7c1305bv25 ? 1m x 18 ? cy7c1307bv25 ? 512k x 36 functional description the cy7c1305bv25/cy7c1307bv25 are 2.5v synchronous pipelined srams equipped with qdr architecture. qdr architecture consists of two separate ports to access the memory array. the read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. qdr architecture has separate data inputs and data outputs to completely eliminate the need to ?turn-around? the data bus required with common i/o devices. access to each port is accomplished through a common address bus. addresses for read and write addresses are latched on alternate rising edges of the input (k) clock. accesses to the device?s read and write ports are completely independent of one another. in order to maximize data throughput, both read and write ports are equipped with double data rate (ddr) interfaces. each address location is associated with four 18-bit words (cy7c1305bv25) and four 36-bit words (cy7c1307bv25) t hat burst sequentially into or out of the device. since data can be transferred into and out of the device on every rising edge of both input clocks (k/k and c/c ) memory bandwidth is maximized while simplifying system design by elimin ating bus ?turn-arounds.? depth expansion is accomplished with port selects for each port. port selects allow each port to operate independently. all synchronous inputs pass through input registers controlled by the k or k input clocks. all data outputs pass through output registers controlled by the c or c input clocks. writes are conducted with on-chip synchronous self-timed write circuitry. [+] feedback [+] feedback
cy7c1307bv25 cy7c1305bv25 document #: 38-05630 rev. *a page 2 of 21 selection guide cy7c1305bv25-167 cy7c1307bv25-167 unit maximum operating frequency 167 mhz maximum operating current 400 ma 256kx18 array clk a [17:0] gen. k k control logic address register d [17:0] read add. decode read data reg. rps wps q [17:0] control logic address register reg. reg. reg. 36 18 18 72 18 bws [0:1] vref write add. decode write reg 36 a (17:0) 18 c c 256kx18 array 256kx18 array 256kx18 array write reg write reg write reg 18 logic block diagram (cy7c1307bv25) 128k x 36 array clk a (16:0) gen. k k control logic address register d [35:0] read add. decode read data reg. rps wps q [35:0] control logic address register reg. reg. reg. 72 17 36 144 36 bws [0:3] vref write add. decode write reg 72 a (16:0) 17 c c 128k x 36 array 128k x 36 array 128k x 36 array write reg write reg write reg 36 logic block diagram (cy7c1305bv25) [+] feedback [+] feedback
cy7c1307bv25 cy7c1305bv25 document #: 38-05630 rev. *a page 3 of 21 \ pin configuration 165-ball fbga (13 x 15 x 1.4 mm) pinout cy7c1305bv25 (1m x 18) 1 2 3 4567891011 a nc gnd/ 144m nc/ 36m wps bws 1 k nc rps a gnd/ 72m nc b nc q9 d9 a nc k bws 0 ancnc q8 c nc nc d10 vss a nc a vss nc q7 d8 d nc d11 q10 vss vss vss vss vss nc nc d7 e nc nc q11 vddq vss vss vss vddq nc d6 q6 f nc q12 d12 vddq vdd vss vdd vddq nc nc q5 g nc d13 q13 vddq vdd vss vdd vddq nc nc d5 h nc vref vddq vddq vdd vss vdd vddq vddq vref zq j nc nc d14 vddq vdd vss vdd vddq nc q4 d4 k nc nc q14 vddq vdd vss vdd vddq nc d3 q3 l nc q15 d15 vddq vss vss vss vddq nc nc q2 m nc nc d16 vss vss vss vss vss nc q1 d2 n nc d17 q16 vss a a a vss nc nc d1 p nc nc q17 a a c a a nc d0 q0 r tdo tck a a a c aaatmstdi cy7c1307bv25 (512k x 36) 12 34567891011 a nc gnd/ 288m nc/ 72m wps bws 2 k bws 1 rps nc/ 36m gnd/ 144m nc b q27 q18 d18 a bws 3 kbws 0 ad17 q17 q8 c d27 q28 d19 vss a nc a vss d16 q7 d8 d d28 d20 q19 vss vss vss vss vss q16 d15 d7 e q29 d29 q20 vddq vss vss vss vddq q15 d6 q6 f q30 q21 d21 vddq vdd vss vdd vddq d14 q14 q5 g d30 d22 q22 vddq vdd vss vdd vddq q13 d13 d5 h nc vref vddq vddq vdd vss vdd vddq vddq vref zq j d31 q31 d23 vddq vdd vss vdd vddq d12 q4 d4 k q32 d32 q23 vddq vdd vss vdd vddq q12 d3 q3 l q33 q24 d24 vddq vss vss vss vddq d11 q11 q2 m d33 q34 d25 vss vss vss vss vss d10 q1 d2 n d34 d26 q25 vss a a a vss q10 d9 d1 p q35 d35 q26 a a c a a q9 d0 q0 r tdo tck a a a c aaatmstdi [+] feedback [+] feedback
cy7c1307bv25 cy7c1305bv25 document #: 38-05630 rev. *a page 4 of 21 pin definitions name i/o description d [x:0] input- synchronous data input signals, sampled on the rising edge of k and k clocks during valid write operations . cy7c1305bv25 ? d [17:0] cy7c1307bv25 ? d [35:0] wps input- synchronous write port select, active low . sampled on the rising edge of the k clock. when asserted active, a write operation is initia ted. deasserting will deselect the write port. deselecting the write port will cause d [x:0] to be ignored. bws 0 , bws 1 , bws 2 , bws 3 input- synchronous byte write select 0, 1, 2, and 3?active low . sampled on the rising edge of the k and k clocks during write operations. used to select which byte is writ ten into the device during the current portion of the write oper ations. bytes not written remain unaltered. cy7c1305bv25 - bws 0 controls d [8:0] and bws 1 controls d [17:9]. cy7c1307bv25 - bws 0 controls d [8:0] , bws 1 controls d [17:9] , bws 2 controls d [26:18] and bws 3 controls d [35:27] all the byte write selects are sampled on the same edge as the data. deselecting a byte write select will cause the corresponding byte of data to be ignored and not written into the device. a input- synchronous address inputs . sampled on the rising edge of the k clock during active read and write operations. these address inputs are multip lexed for both read and write operations. internally, the device is organized as 1m x 18 (4 arrays each of 256k x 18) for cy7c1305bv25 and 512k x 36 (4 arrays each of 128k x 36) for cy7c1307bv25. therefore, only 18 address inputs for cy7c1305bv25 and 17 address inputs for cy7c1307bv25. these inputs are ignored when the appropriate port is deselected. q [x:0] outputs- synchronous data output signals . these pins drive out the reques ted data during a read operation. valid data is driven out on the rising edge of both the c and c clocks during read operations or k and k when in single clock mode. when the read port is deselected, q [x:0] are automatically three-stated. cy7c1305bv25 - q [17:0] cy7c1307bv25 - q [35:0] rps input- synchronous read port select, active low . sampled on the rising edge of positive input clock (k). when active, a read operation is initiated. deasserting will cause the read port to be deselected. when deselected, the pending access is allowed to complete and the output drivers are automatically three-stated followin g the next rising edge of the c clock. each read access consists of a burst of four sequential 18-bit or 36-bit transfers. c input-clock positive input cloc k for output data . c is used in conjunction with c to clock out the read data from the device. c and c can be used together to deskew the flight times of various devices on the board back to the cont roller. see application example for further details. c input-clock negative input clock for output data . c is used in conjunction with c to clock out the read data from the device. c and c can be used together to deskew the flight times of various devices on the board cack to the cont roller. see application example for further details. k input-clock positive input clock input . the rising edge of k is used to capture synchronous inputs to the device and to drive out data through q [x:0] when in single clock mode. all accesses are initiated on the rising edge of k. k input-clock negative input clock input . k is used to capture synchronous inputs to the device and to drive out data through q [x:0] when in single clock mode. zq input output impedance matching input . this input is used to tune the device outputs to the system data bus impedance. q [x:0] output impedance are set to 0.2 x rq, where rq is a resistor connected between zq and ground. alternately, this pin can be connected directly to v ddq , which enables the minimum impedance mode. this pin cannot be connected directly to vss or left unconnected. tdo output tdo pin for jtag tck input tck pin for jtag tdi input tdi pin for jtag tms input tms pin for jtag [+] feedback [+] feedback
cy7c1307bv25 cy7c1305bv25 document #: 38-05630 rev. *a page 5 of 21 introduction functional overview the cy7c1305bv25/cy7c1307bv25 are synchronous pipelined burst srams equipped with both a read port and a write port. the read port is dedicated to read operations and the write port is dedicated to write operations. data flows into the sram through the write port and out through the read port. these devices multiplex the address inputs in order to minimize the number of address pins required. by having separate read and write ports, the device completely elimi- nates the need to ?turn-around? the data bus and avoids any possible data contention, ther eby simplifying system design. each access consists of four 18 -bit data transfers in the case of cy7c1305bv25 and four 36-bit data transfers in the case of cy7c1307bv25, in two clock cycles. accesses for both ports are initiated on the rising edge of the positive input clock (k). all synchronous input timing is refer- enced from the rising edge of the input clocks (k and k ) and all output timing is referenced to the rising edge of output clocks (c and c, or k and k when in single clock mode). all synchronous data inputs (d [x:0] ) pass through input registers controlled by the risi ng edge of input clocks (k and k ). all synchronous data outputs (q [x:0] ) pass through output registers controlled by the ri sing edge of the output clocks (c and c, or k and k when in single clock mode). all synchronous control (rps , wps , bws [0:x] ) inputs pass through input registers controlle d by the rising edge of input clocks (k and k ). cy7c1305bv25 is described in the following sections. the same basic descriptions apply to cy7c1307bv25. read operations the cy7c1305bv25 is organized internally as 4 arrays of 256k x 18. accesses are completed in a burst of four sequential 18-bit data words. read operations are initiated by asserting rps active at the rising edge of the positive input clock (k). the address presented to address inputs are stored in the read address register. following the next k clock rise the corresponding lowest order 18-bit word of data is driven onto the q [17:0] using c as the output timing reference. on the subsequent rising edge of c the next 18-bit data word is driven onto the q [17:0] . this process continues until all four 18-bit data words have been driven out onto q [17:0] . the requested data will be valid 2.5 ns from the ri sing edge of the output clock (c and c , or k and k when in single clock mode, 250-mhz device). in order to maintain the internal logic, each read access must be allowed to co mplete. each read access consists of four 18-bit data words and takes 2 clock cycles to complete. therefore, read accesses to the device can not be initiated on two consecutive k clock rises. the internal logic of the device will ignore the second read request. read accesses can be initiated on ever y other k clock rise. doing so will pipeline the data flow such that data is transferred out of the device on every rising edge of the output clocks (c and c, or k and k when in single clock mode). when the read port is deselected, the cy7c1305bv25 will first complete the pending read transactions. synchronous internal circuitry will automatically thre e-state the outputs following the next rising edge of the positive ou tput clock (c). this will allow for a seamless transition between devices without the insertion of wait states in a depth expanded memory. write operations write operations are initiated by asserting wps active at the rising edge of the positive input clock (k). on the following k clock rise the data presented to d [17:0] is latched and stored into the lower 18-bit write data register provided bws [1:0] are both asserted active. on the subsequent rising edge of the negative input clock (k ) the information presented to d [17:0] is also stored into the write data register provided bws [1:0] are both asserted active. this process continues for one more cycle until four 18-bit words (a total of 72 bits) of data are stored in the sram. the 72 bits of data are then written into the memory array at the specif ied location. therefore, write accesses to the device can not be initiated on two consecutive k clock rises. the internal logic of the device will ignore the second write request. write accesses can be initiated on every other rising edge of the positive clock (k). doing so will pipeline the data flow such that 18-bits of data can be trans- ferred into the device on every rising edge of the input clocks (k and k ). nc/36m n/a address expansion for 36m . this is not connected to the die. can be connected to any voltage level on cy7c1305bv25/cy7c1307bv25. gnd/72m input address expansion for 72m . this should be tied low on the cy7c1305bv25. nc/72m n/a address expansion for 72m . this can be connected to any voltage level on cy7c1307bv25. gnd/144m input address expansion for 144m . this should be tied low on cy7c1305bv25/cy7c1307bv25. gnd/288m input address expansion for 144m . this should be tied low on cy7c1307bv25. v ref input- reference reference voltage input . static input used to set the reference level for hstl inputs and outputs as well as ac measurement points. v dd power supply power supply inputs to the core of the device v ss ground ground for the device v ddq power supply power supply inputs for the outputs of the device nc n/a not connected to the die . can be tied to any voltage level. pin definitions (continued) name i/o description [+] feedback [+] feedback
cy7c1307bv25 cy7c1305bv25 document #: 38-05630 rev. *a page 6 of 21 when deselected, the wr ite port will ignore all inputs after the pending write operations have been completed. byte write operations byte write operations are supported by the cy7c1305bv25. a write operation is initiated as described in the write operation section above. the bytes that are written are deter- mined by bws 0 and bws 1 , which are sampled with each set of 18-bit data word. asserting the appropriate byte write select input during the data portion of a write will allow the data being presented to be latched and written into the device. deasserting the byte write select input during the data portion of a write will allow the data stored in the device for that byte to remain unaltered. this feature can be used to simplify read/modify/write operations to a byte write operation. single clock mode the cy7c1305bv25 can be used with a single clock that controls both the input and output registers. in this mode the device will recognize only a singl e pair of input clocks (k and k ) that control both the input and output registers. this operation is identical to the operation if the device had zero skew between the k/k and c/c clocks. all timing parameters remain the same in this mode. to use this mode of operation, the user must tie c and c high at power-on. this function is a strap option and not alterable during device operation. concurrent transactions the read and write ports on the cy7c1305bv25 operate completely independently of one another. since each port latches the address inputs on different clock edges, the user can read or write to any location, regardless of the trans- action on the other port. if the ports access the same location at the same time, the sram will deliver the most recent infor- mation associated with the s pecified address location. this includes forwarding data from a write cycle that was initiated on the previous k clock rise. read and write accesses must be scheduled such that one transaction is initia ted on any clock cycle. if both ports are selected on the same k clock rise, the arbitration depends on the previous state of the sram . if both ports were deselected, the read port will take priority. if a read was initiated on the previous cycle, the write port wi ll assume priority (since read operations can not be initiate d on consecutive cycles). if a write was initiated on the previous cycle, the read port will assume priority (since write op erations can not be initiated on consecutive cycles). therefore, asserting both port selects active from a deselected stat e will result in alternating read/write operations being init iated, with the first access being a read. depth expansion the cy7c1305bv25 has a port select input for each port. this allows for easy depth expansion. both port selects are sampled on the rising edge of the positive input clock only (k). each port select input can deselect the specified port. deselecting a port will not affect the other port. all pending transactions (read and write) will be completed prior to the device being deselected. programmable impedance an external resistor, rq, must be connected between the zq pin on the sram and v ss to allow the sram to adjust its output driver impedance. the va lue of rq must be 5x the value of the intended line impedance driven by the sram, the allowable range of rq to guarantee impedance matching with a tolerance of 15% is between 175 ? and 350 ? , with v ddq =1.5v. the output impedance is adjusted every 1024 cycles upon power-up to account for drifts in supply voltage and temperature. note: 1. the above application shows four qdr-i being used. application example [1] [+] feedback [+] feedback
cy7c1307bv25 cy7c1305bv25 document #: 38-05630 rev. *a page 7 of 21 truth table [2, 3, 4, 5, 6, 7, 8, 9] operation k rps wps dq dq dq dq write cycle : load address on the rising edge of k; wait one cycle; input write data on two consecutive k and k rising edges. l-h h [8] l [9] d(a+00) at k(t+1) d(a+01) at k (t+1) d(a+10) at k(t+2) d(a+11) at k (t+2) read cycle : load address on the rising edge of k; wait one cycle; read data on two consec- utive c and c rising edges. l-h l [9] x q(a+00) at c(t+1) q(a+01) at c (t+1) q(a+10) at c(t+2) q(a+11) at c (t+2) nop : no operation l-h h h d = x q = high-z d = x q = high-z d = x q = high-z d = x q = high-z standby : clock stopped stopped x x previous state previous state previous state previous state write cycle descriptions (cy7c1305bv25) [2, 10] bws 0 bws 1 kk comments l l l-h ? during the data portion of a write sequence, both bytes (d [17:0] ) are written into the device. l l ? l-h during the data portion of a write sequence, both bytes (d [17:0] ) are written into the device. l h l-h ? during the data portion of a write sequence, only the lower byte (d [8:0] ) is written into the device. d [17:9] will remain unaltered. l h ? l-h during the data portion of a write sequence, only the lower byte (d [8:0] ) is written into the device. d [17:9] will remain unaltered. h l l-h ? during the data portion of a write sequence, only the upper byte (d [17:9] ) is written into the device. d [8:0] will remain unaltered. h l ? l-h during the data portion of a write sequence, only the upper byte (d [17:9] ) is written into the device. d [8:0] will remain unaltered. h h l-h ? no data is written into the device du ring this portion of a write operation. h h ? l-h no data is written into the device du ring this portion of a write operation. notes: 2. x = don't care, h = logic high, l = logic low, represents rising edge. 3. device will power-up deselected and the outputs in a three-state condition. 4. ?a? represents address location latched by the devices when trans action was initiated. a+00, a+01, a+10 and a+11 represents t he address sequence in the burst. 5. ?t? represents the cycle at which a read/write operation is star ted. t+1 and t+2 are the first and second clock cycles respec tively succeeding the ?t? clock cycle. 6. data inputs are registered at k and k rising edges. data outputs are delivered on c and c rising edges, except when in single clock mode. 7. it is recommended that k = k and c = c when clock is stopped. this is not essential, but permits mo st rapid restart by overcoming transmission line charging symmetrically. 8. if this signal was low to initiate the previous cycle, this signal becomes a don?t care for this operation. 9. this signal was high on previous k clock rise. initiating cons ecutive read or write operations on consecutive k clock rises i s not permitted. the device will ignore the second read request. 10. assumes a write cycle was initiated per the write port cycle description truth table. bws 0 and bws 1 in the case of cy7c1305bv25 and bws 2 and bws 3 in the case of cy7c1307bv25 can be altered on different portions of a write cycle, as long as the set-up and hold requirements are achieved. [+] feedback [+] feedback
cy7c1307bv25 cy7c1305bv25 document #: 38-05630 rev. *a page 8 of 21 write cycle descriptions (cy7c1307bv25) [2, 10 ] bws 0 bws 1 bws 2 bws 3 kk comments l l l l l-h ? during the data portion of a write sequence, all four bytes (d [35:0] ) are written into the device. l l l l ? l-h during the data portion of a write sequence, all four bytes (d [35:0] ) are written into the device. l h h h l-h ? during the data portion of a write sequence, only the lower byte (d [8:0] ) is written into the device. d [35:9] will remain unaltered. l h h h ? l-h during the data portion of a write sequence, only the lower byte (d [8:0] ) is written into the device. d [35:9] will remain unaltered. h l h h l-h ? during the data portion of a write sequence, only the byte (d [17:9] ) is written into the device. d [8:0] and d [35:18] will remain unaltered. h l h h ? l-h during the data portion of a write sequence, only the byte (d [17:9] ) is written into the device. d [8:0] and d [35:18] will remain unaltered. h h l h l-h ? during the data portion of a write sequence, only the byte (d [26:18] ) is written into the device. d [17:0] and d [35:27] will remain unaltered. h h l h ? l-h during the data portion of a write sequence, only the byte (d [26:18] ) is written into the device. d [17:0] and d [35:27] will remain unaltered. h h h l l-h during the data portion of a write sequence, only the byte (d [35:27] ) is written into the device. d [26:0] will remain unaltered. h h h l ? l-h during the data portion of a write sequence, only the byte (d [35:27] ) is written into the device. d [26:0] will remain unaltered. h h h h l-h ? no data is written into the device during this portion of a write operation. h h h h ? l-h no data is written into the device during this portion of a write operation. [+] feedback [+] feedback
cy7c1307bv25 cy7c1305bv25 document #: 38-05630 rev. *a page 9 of 21 ieee 1149.1 serial boundary scan (jtag) these srams incorporate a serial boundary scan test access port (tap) in the fbga package. this part is fully compliant with ieee standard #1149.1-1900. the tap operates using jedec standard 2.5v i/o logic levels. disabling the jtag feature it is possible to operate the sram without using the jtag feature. to disable the tap controller, tck must be tied low (v ss ) to prevent clocking of the device. tdi and tms are inter- nally pulled up and may be unconnected. they may alternately be connected to v dd through a pull-up resistor. tdo should be left unconnected. upon power-up, the device will come up in a reset state which will not interfere with the operation of the device. test access port?test clock the test clock is used only with the tap controller. all inputs are captured on the rising edge of tck. all outputs are driven from the falling edge of tck. test mode select the tms input is used to give commands to the tap controller and is sampled on the rising edge of tck. it is allowable to leave this pin unconnected if the tap is not used. the pin is pulled up internally, resulting in a logic high level. test data-in (tdi) the tdi pin is used to serially input information into the registers and can be connected to the input of any of the registers. the register between tdi and tdo is chosen by the instruction that is loaded into the tap instruction register. for information on loading the instruction register, see the tap controller state diagram. tdi is internally pulled up and can be unconnected if the tap is unused in an application. tdi is connected to the most signific ant bit (msb) on any register. test data-out (tdo) the tdo output pin is used to serially clock data-out from the registers. the output is ac tive depending upon the current state of the tap state machine (see instruction codes). the output changes on the falling edge of tck. tdo is connected to the least significant bit (lsb) of any register. performing a tap reset a reset is performed by forcing tms high (v dd ) for five rising edges of tck. this reset does not affect the operation of the sram and may be performed while the sram is operating. at power-up, the tap is reset internally to ensure that tdo comes up in a high-z state. tap registers registers are connected betw een the tdi and tdo pins and allow data to be scanned into and out of the sram test circuitry. only one register can be selected at a time through the instruction register s. data is serially loaded into the tdi pin on the rising edge of tck. data is output on the tdo pin on the falling edge of tck. instruction register three-bit instructions can be serially loaded into the instruction register. this register is loaded when it is placed between the tdi and tdo pins as shown in tap controller block diagram. upon power-up, the instruction register is loaded with the idcode instruction. it is also loaded with the idcode instruction if the controller is placed in a reset state as described in the previous section. when the tap controller is in the capture ir state, the two least significant bits are loaded with a binary ?01? pattern to allow for fault isolation of the board level serial test path. bypass register to save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. the bypass register is a single-bit register that can be placed between tdi and tdo pins. this allows data to be shifted through the sram with minimal delay. the bypass register is set low (v ss ) when the bypass instruction is executed. boundary scan register the boundary scan register is connected to all of the input and output pins on the sram. seve ral no connect (nc) pins are also included in the scan register to reserve pins for higher density devices. the boundary scan register is loaded with the contents of the ram input and output ring when the tap controller is in the capture-dr state and is then placed between the tdi and tdo pins when the controller is moved to the shift-dr state. the extest, sample/preload and sample z instruc- tions can be used to capture the contents of the input and output ring. the boundary scan order tables show the order in which the bits are connected. each bit corresponds to one of the bumps on the sram package. the msb of the register is connected to tdi, and the lsb is connected to tdo. identification (id) register the id register is loaded with a vendor-specific, 32-bit code during the capture-dr state when the idcode command is loaded in the instruction register. the idcode is hardwired into the sram and can be shifted out when the tap controller is in the shift-dr state. the id register has a vendor code and other information described in the identification register definitions table. tap instruction set eight different instructions are possible with the three-bit instruction register. all combinations are listed in the instruction code table. three of these instructions are listed as reserved and should not be used. the other five instruc- tions are described in detail below. instructions are loaded into the tap controller during the shift-ir state when the instruction register is placed between tdi and tdo. during this stat e, instructions are shifted through the instruction register through the tdi and tdo pins. to execute the instruction once it is shifted in, the tap controller needs to be moved into the update-ir state. idcode the idcode instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. it also places the instruction register between the tdi and tdo pins and allows the idcode to be shifted out of the device when the tap controller enters the shift-dr st ate. the idcode instruction [+] feedback [+] feedback
cy7c1307bv25 cy7c1305bv25 document #: 38-05630 rev. *a page 10 of 21 is loaded into the instruction register upon power-up or whenever the tap controller is given a test logic reset state. sample z the sample z instruction caus es the boundary scan register to be connected between the tdi and tdo pins when the tap controller is in a shift-dr state. the sample z command puts the output bus into a high-z state until the next command is given during the ?update ir? state. sample/preload sample/preload is a 1149.1 mandatory instruction. when the sample/preload instructi ons are loaded into the instruction register and the tap controller is in the capture-dr state, a snapshot of data on the inputs and output pins is captured in the boundary scan register. the user must be aware that th e tap controller clock can only operate at a frequency up to 10 mhz, while the sram clock operates more than an order of magnitude faster. because there is a large difference in the clock frequencies, it is possible that during the captur e-dr state, an input or output will undergo a transition. the tap may then try to capture a signal while in transition (metastable state). this will not harm the device, but there is no guar antee as to the value that will be captured. repeatable results may not be possible. to guarantee that the boundary scan register will capture the correct value of a signal, the sram signal must be stabilized long enough to meet the tap controller's capture set-up plus hold times (t cs and t ch ). the sram clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a sampl e/preload instruction. if this is an issue, it is still possible to capture all other signals and simply ignore the value of the ck and ck captured in the boundary scan register. once the data is captured, it is possible to shift out the data by putting the tap into the shift-dr state. this places the boundary scan register between the tdi and tdo pins. preload allows an initial data pattern to be placed at the latched parallel outputs of the boundary scan register cells prior to the selection of another boundary scan test operation. the shifting of data for the sample and preload phases can occur concurrently when required?that is, while data captured is shifted out, the preloaded data can be shifted in. bypass when the bypass instruction is loaded in t he instruction register and the tap is placed in a shift-dr state, the bypass register is placed between the tdi and tdo pins. the advantage of the bypass instructio n is that it shortens the boundary scan path when multiple devices are connected together on a board. extest the extest instruction enables the preloaded data to be driven out through the system out put pins. this instruction also selects the boundary scan register to be connected for serial access between the tdi and tdo in the shift-dr controller state. extest output bus tri-state ieee standard 1149.1 mandates that t he tap controller be able to put the output bus into a tri-state mode. the boundary scan register has a special bit located at bit #47. when this scan cell, called the ?extest output bus tri-state?, is latched into the preload register during the ?update-dr? state in the tap controller, it will directly control the state of the output (q-bus) pins, when the extest is entered as the current instruction. when high, it will enable the output buffers to drive the output bus. when low, this bit will place the output bus into a high-z condition. this bit can be set by entering the sample/preload or extest command, and then shifting the desired bit into that cell, during the ?shift-dr? stat e. during ?update-dr?, the value loaded into that shift-register cell will latch into the preload register. when the extest instru ction is entered, this bit will directly control the output q-bu s pins. note that this bit is pre-set high to enable the output when the device is powered-up, and also when the tap controller is in the ?test-logic-reset? state. reserved these instructions are not im plemented but are reserved for future use. do not use these instructions. [+] feedback [+] feedback
cy7c1307bv25 cy7c1305bv25 document #: 38-05630 rev. *a page 11 of 21 tap controller state diagram [11] note: 11. the 0/1 next to each state represents the value at tms at the rising edge of tck. test-logic reset test-logic/ idle select dr-scan capture-dr shift-dr exit1-dr pause-dr exit2-dr update-dr select ir-scan capture-ir shift-ir exit1-ir pause-ir exit2-ir update-ir 1 0 1 1 0 1 0 1 0 0 0 1 1 1 0 1 0 1 0 0 0 1 0 1 1 0 1 0 0 1 1 0 [+] feedback [+] feedback
cy7c1307bv25 cy7c1305bv25 document #: 38-05630 rev. *a page 12 of 21 tap controller block diagram tap electrical characteristics over the operating range [12, 15, 17] parameter description test conditions min. max. unit v oh1 output high voltage i oh = ? 2.0 ma 1.7 v v oh2 output high voltage i oh = ? 100 a2.1 v v ol1 output low voltage i ol = 2.0 ma 0.7 v v ol2 output low voltage i ol = 100 a0.2v v ih input high voltage 1.7 v dd + 0.3 v v il input low voltage ?0.3 0.7 v i x input and output load current gnd v i v ddq ? 55 a tap ac switching characteristics over the operating range [13, 14] parameter descrip tion min. max. unit t tcyc tck clock cycle time 50 ns t tf tck clock frequency 20 mhz t th tck clock high 20 ns t tl tck clock low 20 ns set-up times t tmss tms set-up to tc k clock rise 10 ns t tdis tdi set-up to tck clock rise 10 ns t cs capture set-up to tck rise 10 ns hold times t tmsh tms hold after tck clock rise 10 ns t tdih tdi hold after clock rise 10 ns t ch capture hold after clock rise 10 ns notes: 12. these characteristic pertain to the tap inputs (tms, tck, tdi and tdo). parallel load levels are specified in the electrical characteristics table. 13. parameters t cs and t ch refer to the set-up and hold time requirements of latching data from the boundary scan register. 14. test conditions are specified using the load in tap ac test conditions. t r /t f = 1 ns. 0 0 1 2 . . 29 30 31 boundary scan register identification register 0 1 2 . . . . 106 0 1 2 instruction register bypass register selection circuitry selection circuitry tap controller tdi tdo tck tms [+] feedback [+] feedback
cy7c1307bv25 cy7c1305bv25 document #: 38-05630 rev. *a page 13 of 21 output times t tdov tck clock low to tdo valid 20 ns t tdox tck clock low to tdo invalid 0 ns tap timing and test conditions [14] identification register definitions instruction field value description cy7c1305bv25 cy7c1307bv25 revision number (31:29) 000 000 version number. cypress device id (28:12) 01011010011010101 01011010011100101 defines the type of sram. cypress jedec id (11:1) 00000110100 00000110100 al lows unique identification of sram vendor. id register presence (0) 1 1 indicat e the presence of an id register. tap ac switching characteristics over the operating range (continued) [13, 14] parameter descrip tion min. max. unit (a) tdo c l = 20 pf z 0 =50 ? gnd 1.25v test clock test mode select tck tms test data-in tdi test data-out tdo t tcyc t tmsh t tl t th t tmss t tdis t tdih t tdox t tdov 50 ? 2.5v 0v all input pulses 1.25v [+] feedback [+] feedback
cy7c1307bv25 cy7c1305bv25 document #: 38-05630 rev. *a page 14 of 21 scan register sizes register name bit size instruction 3 bypass 1 id 32 boundary scan 107 instruction codes instruction code description extest 000 captures the inpu t/output ring contents. idcode 001 loads the id register with the vendor id code and places the register between tdi and tdo. this operation does not affect sram operation. sample z 010 captures the input/output contents. places the boundary scan register between tdi and tdo. forces all sram outpu t drivers to a high-z state. reserved 011 do not use: this instruct ion is reserved for future use. sample/preload 100 captures the input /output ring contents. places the boundary scan register between tdi and tdo. does not affect the sram operation. reserved 101 do not use: this instruct ion is reserved for future use. reserved 110 do not use: this instruct ion is reserved for future use. bypass 111 places the bypass register between tdi and tdo. this operation does not affect sram operation. [+] feedback [+] feedback
cy7c1307bv25 cy7c1305bv25 document #: 38-05630 rev. *a page 15 of 21 boundary scan order bit # bump id bit # bump id bit # bump id bit # bump id 0 6r 27 11h 54 7b 81 3g 1 6p 28 10g 55 6b 82 2g 2 6n 29 9g 56 6a 83 1j 3 7p 30 11f 57 5b 84 2j 4 7n 31 11g 58 5a 85 3k 5 7r 32 9f 59 4a 86 3j 6 8r 33 10f 60 5c 87 2k 7 8p 34 11e 61 4b 88 1k 8 9r 35 10e 62 3a 89 2l 9 11p 36 10d 63 1h 90 3l 10 10p 37 9e 64 1a 91 1m 11 10n 38 10c 65 2b 92 1l 12 9p 39 11d 66 3b 93 3n 13 10m 40 9c 67 1c 94 3m 14 11n 41 9d 68 1b 95 1n 15 9m 42 11b 69 3d 96 2m 16 9n 43 11c 70 3c 97 3p 17 11l 44 9b 71 1d 98 2n 18 11m 45 10b 72 2c 99 2p 19 9l 46 11a 73 3e 100 1p 20 10l 47 internal 74 2d 101 3r 21 11k 48 9a 75 2e 102 4r 22 10k 49 8b 76 1e 103 4p 23 9j 50 7c 77 2f 104 5p 24 9k 51 6c 78 3f 105 5n 25 10j 52 8a 79 1g 106 5r 26 11j 53 7a 80 1f [+] feedback [+] feedback
cy7c1307bv25 cy7c1305bv25 document #: 38-05630 rev. *a page 16 of 21 maximum ratings (above which the useful life may be impaired.) storage temperature .............. .................. ?65c to + 150c ambient temperature with power applied........... .............. .............. ..... ?55c to + 125c supply voltage on v dd relative to gnd....... ?0.5v to + 3.6v supply voltage on v ddq relative to gnd ..... ?0.5v to + v dd dc applied to outputs in high-z state ?0.5v to v ddq + 0.5v dc input voltage [15] ...............................?0.5v to v dd + 0.5v current into outputs (low).... ..................................... 20 ma static discharge voltage......... ........... ............ .......... > 2001v (per mil-std-883, method 3015) latch-up current ................................................... > 200 ma operating range range ambient temperature (t a) v dd [16] v ddq [16] com?l 0c to +70c 2.5 0.1v 1.4v to 1.9v ind?l ?40c to +85c electrical characteristics over the operating range [17] dc electrical characteristics over the operating range parameter description test conditions min. typ. max. unit v dd power supply voltage 2.4 2.5 2.6 v v ddq i/o supply voltage 1.4 1.5 1.9 v v oh output high voltage note 18 v ddq /2 ? 0.12 v ddq /2 + 0.12 v v ol output low voltage note 19 v ddq /2 ? 0.12 v ddq /2 + 0.12 v v oh(low) output high voltage i oh = ?0.1 ma, nominal impedance v ddq ? 0.2 v ddq v v ol(low) output low voltage i oh = 0.1 ma, nominal impedance v ss 0.2 v v ih input high voltage [15] v ref + 0.1 v ddq + 0.3 v v il input low voltage [15, 20] ?0.3 v ref ? 0.1 v i x input load current gnd v i v ddq ?5 5 a i oz output leakage current gnd v i v ddq, output disabled ?5 5 a v ref input reference voltage [21] typical value = 0.75v 0.68 0.75 0.95 v i dd v dd operating supply v dd = max., i out = 0 ma, f = f max = 1/t cyc 400 ma i sb1 automatic power-down current max. v dd , both ports deselected,v in v ih or v in < v il f = f max = 1/t cyc, inputs static 200 ma ac input requirements over the operating range parameter description test conditions min. typ. max. unit v ih input high voltage v ref + 0.2 ? ? v v il input low voltage ? ? v ref ? 0.2 v thermal resistance [22] parameter description test conditions 165 fbga package unit ja thermal resistance (junction to ambient) test conditions follow standard test methods and proce- dures for measuring thermal impedance, per eia/jesd51. 16.7 c/w jc thermal resistance (junction to case) 2.5 c/w notes: 15. overshoot: v ih (ac) < v ddq +0.85v (pulse width less than t cyc /2), undershoot: v il (ac) > ?1.5v (pulse width less than t cyc /2). 16. power-up: assumes a linear ramp from 0v to v dd (min.) within 200 ms. during this time v ih < v dd and v ddq < v dd . 17. all voltage referenced to ground. 18. output are impedance controlled. i oh = ?(v ddq /2)/(rq/5) for values of 175 ? <= rq <= 350 ? . 19. output are impedance controlled. i ol = (v ddq/ 2)/(rq/5) for values of 175 ? <= rq <= 350 ? . 20. this spec is for all inputs except c and c clock. for c and c clock, v il (max.) = v ref ? 0.2v. 21. v ref (min.) = 0.68v or 0.46v ddq , whichever is larger, v ref (max.) = 0.95v or 0.54v ddq , whichever is smaller. 22. tested initially and after any design or process change that may affect these parameters. [+] feedback [+] feedback
cy7c1307bv25 cy7c1305bv25 document #: 38-05630 rev. *a page 17 of 21 capacitance [22] parameter description tes t conditions max. unit c in input capacitance t a = 25c, f = 1 mhz, v dd = 2.5v. v ddq = 1.5v 5pf c clk clock input capacitance 6 pf c o output capacitance 7 pf ac test loads and waveforms 1.25v 0.25v r = 50 ? 5pf all input pulses device r l = 50 ? z 0 = 50 ? v ref = 0.75v v ref = 0.75v [23] 0.75v under te s t 0.75v device under te s t output 0.75v v ref v ref output zq zq (a) slew rate = 2 v/ns rq = 250 ? (b) rq = 250 ? [+] feedback [+] feedback
cy7c1307bv25 cy7c1305bv25 document #: 38-05630 rev. *a page 18 of 21 switching characteristics over the operating range [23] cypress parameter consortium parameter description 167 mhz unit min. max. t power [24] v cc (typical) to the first access read or write 10 s cycle time t cyc t khkh k clock and c clock cycle time 6.0 ns t kh t khkl input clock (k/k and c/c ) high 2.4 ns t kl t klkh input clock (k/k and c/c ) low 2.4 ns t khk h t khk h k/k clock rise to k /k clock rise and c/c to c/c rise (rising edge to rising edge) 2.7 3.3 ns t khch t khch k/k clock rise to c/c clock rise (rising edge to rising edge) 0.0 2.0 ns set-up times t sa t sa address set-up to clock (k and k ) rise 0.7 ns t sc t sc control set-up to clock (k and k ) rise (rps , wps , bws 0 , bws 1 )0.7 ns t sd t sd d [x:0] set-up to clock (k and k ) rise 0.7 ns hold times t ha t ha address hold after clock (k and k ) rise 0.7 ns t hc t hc control signals hold after clock (k and k ) rise (rps , wps , bws 0 , bws 1 ) 0.7 ns t hd t hd d [x:0] hold after clock (k and k ) rise 0.7 ns output times t co t chqv c/c clock rise (or k/k in single clock mode) to data valid [25] 2.5 ns t doh t chqx data output hold after output c/c clock rise (active to active) 1.2 ns t chz t chz clock (c and c ) rise to high-z (active to high-z) [25, 26] 2.5 ns t clz t clz clock (c and c ) rise to low-z [25, 26] 1.2 ns notes: 23. unless otherwise noted, test conditions assume signal tran sition time of 2v/ns, timing reference levels of 0.75v,v ref = 0.75v, rq = 250 ? , v ddq = 1.5v, input pulse levels of 0.25v to 1.25v, and output loading of the specified i ol /i oh and load capacitance shown in (a) of ac test loads. 24. this part has a voltage regulator that steps down the voltage internally; t power is the time power needs to be supplied above v dd minimum initially before a read or write operation can be initiated. 25. at any given voltage and temperature t chz is less than t clz and, t chz less than t co . 26. t chz , t clz , are specified with a load capacitance of 5 pf as in part (b) of ac test loads. transition is measured 100 mv from steady-st ate voltage. [+] feedback [+] feedback
cy7c1307bv25 cy7c1305bv25 document #: 38-05630 rev. *a page 19 of 21 switching waveforms [27, 28, 29] notes: 27. q00 refers to output from address a0. q01 refers to output from the next internal burst address following a0, i.e., a0+1. 28. outputs are disabled (high- z) one clock cycle after a nop. 29. in this example, if address a2 = a1 then data q20 = d10 and q21 = d11. write data is forwarded immediately as read results.t his note applies to the whole diagram. k 1 23456 7 k rps w ps a q d c c a0 read read write write q00 q03 d10 d11 d12 d13 d30 d31 d32 d3 3 a1 t kh t khkh t khch t co t doh t kl t cyc t t hc t sa t ha t sd t hd t khch q01 q02 q23 q22 q20 q21 nop nop qx3 a2 t sd t hd don?t care undefine d t clz t co t doh t chz sc t t hc sc t kh t khkh t kl t cyc a3 [+] feedback [+] feedback
cy7c1307bv25 cy7c1305bv25 document #: 38-05630 rev. *a page 20 of 21 ? cypress semiconductor corporation, 2006. the information contained herein is subject to change without notice. cypress semic onductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress product. nor does it convey or imply any license under patent or ot her rights. cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agr eement with cypress. furthermore, cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to re sult in significant injury to the user. the inclusion of cypress products in life-support systems application implies that the manu facturer assumes all risk of such use and in doing so indemni fies cypress against all charges. quad data rate sram and qdr sram comprise a new family of products dev eloped by cypress, idt, nec, renesas and samsung. all products and company names mentioned in this document may be the trademarks of their respective holders. ordering information ?not all of the speed, package and temperature ranges are ava ilable. please contact your lo cal sales representative or visit www.cypress.com for actual products offered?. speed (mhz) ordering code package diagram package type operating range 167 cy7c1305bv25-167bzc 51-85180 1 65-ball fine pitch ball grid array (13 x 15 x 1.4 mm) commercial cy7c1307bv25-167bzc cy7c1305bv25-167bzxc 165-ball fine pitch ball grid array (13 x 15 x 1.4 mm) lead free CY7C1307BV25-167BZXC cy7c1305bv25-167bzi 165-ball fine pitch ball grid array (13 x 15 x 1.4 mm) industrial cy7c1307bv25-167bzi cy7c1305bv25-167bzxi 165-ball fine pitch ball grid array (13 x 15 x 1.4 mm) lead free cy7c1307bv25-167bzxi package diagram a 1 pin 1 corner 15.000.10 13.000.10 7.00 1.00 ?0.50 (165x) ?0.25mcab ?0.05 m c b a 0.15(4x) 0.350.06 seating plane 0.530.05 0.25 c 0.15 c pin1corner top view bottom view 2 3 4 5 6 7 8 9 10 10.00 14.00 b c d e f g h j k l m n 11 11 10 9 8 67 5 4 3 2 1 p r p r k m n l j h g f e d c b a a 15.000.10 13.000.10 b c 1.00 5.00 0.36 -0.06 +0.14 1.40 max. solder pad type : non-solder mask defined (nsmd) notes : package weight : 0.475g jedec reference : mo-216 / design 4.6c package code : bb0ac 51-85180-*a 165 fbga 13 x 15 x 1.40 mm bb165d/bw165d a 1 pin 1 corner 15.000.10 13.000.10 7.00 1.00 ?0.50 (165x) ?0.25 m c a b ?0.05 m c b a 0.15(4x) 0.350.06 seating plane 0.530.05 0.25 c 0.15 c pin 1 corner top view bottom view 2 3 4 5 6 7 8 9 10 10.00 14.00 b c d e f g h j k l m n 11 11 10 9 8 67 5 4 3 2 1 p r p r k m n l j h g f e d c b a a 15.000.10 13.000.10 b c 1.00 5.00 0.36 - 0.06 +0.14 1.40 max. solder pad type : non-solder mask defined (nsmd) notes : package weight : 0.475g jedec reference : mo-216 / design 4.6c package code : bb0ac 51-85180-*a 165-ball fbga (13 x 15 x 1.4 mm) (51-85180) [+] feedback [+] feedback
cy7c1307bv25 cy7c1305bv25 document #: 38-05630 rev. *a page 21 of 21 document history page document title: cy7c1305bv25/cy7c1307bv25 18-mbit burst of four pipelined sram with qdr? architecture document number: 38-05630 rev. ecn no. issue date orig. of change description of change ** 253049 see ecn syt new data sheet *a 436864 see ecn nxr converted from preliminary to final. removed 133 mhz & 100 mhz from product offering. included industrial operating range. changed c/c description in the features section & pin description table. changed t tcyc from 100 ns to 50 ns, changed t tf from 10 mhz to 20 mhz and changed t th and t tl from 40 ns to 20 ns in tap ac switching characteristics table modified the zq pin definition as follows: alternately, this pin can be connected directly to v ddq , which enables the minimum impedance mode included maximum ratings for supply voltage on v ddq relative to gnd changed the maximum ratings for dc input voltage from v ddq to v dd. modified the description of i x from input load current to input leakage current on page # 16. modified test condition in note# 16 from v ddq < v dd to v ddq v dd updated the ordering information table and replaced the package name column with package diagram. [+] feedback [+] feedback

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